Performance analysis of Cu(In,Ga)(Se,S)2 thin film solar cells

The impact of sulfur incorporation and its content in the Cu(In,Ga)(Se,S)
₂
layer with respect to a bandgap widening and an improvement of absorber quality has been investigated. A theoretical method to quantitatively estimate the minority carrier lifetimes based on experimental temperature dependent Voc measurements is presented. The often observed discrepancy between lifetime measurements on the bare Cu(In,Ga)(Se,S)
₂
films and completed devices is discussed.