Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters

This paper describes a method to extract the ideality factor, barrier height and series resistance of a lateral AlGaN/GaN heterostructure power Schottky diode using a simple I-V measurement in on-state and sub-threshold domains. An analytical model previously developed for Gallium Arsenide (GaAs) and Silicon vertical diodes [1] is applied to lateral AlGaN/GaN Schottky diodes and calibrated using extensive experimental results. The validity of the model at increased temperatures (up to 428K) is also investigated and the dependence of the ideality factor and barrier height with temperature are obtained and assessed against those previously reported in the literature [2].