Deposition and characterization of ZnO thin film for FET with back gate biasing-based biosensors application

This paper presents the preparation and characterization of zinc oxide (ZnO) thin film prior deposition on the channel of field-effect transistor with back gate biasing (FET-BG) for biosensing application. Sol-Gel technique is a chosen method for the preparation of the ZnO seed solution, followed by the deposition process through spin coating technique on the silicon dioxide (SiO2). Prior to that, the SiO2 layer is grown on a silicon die. The ZnO seed solution is deposited at various numbers of coating layer (1, 3, and 5 coating layers), baked, and annealed prior to characterization of its surface morphological, structural, crystalline phase, and electrical characterization. The results obtained give a significant evidences for the future deposition process of the ZnO thin films as the FET-BG biosensor device on the silicon-on-insulator (SOI) wafer.