Reactive Ion etching of TiO2 thin film: The impact of different gaseous

Titanium dioxide (TiO
₂
) is one of a metal oxide material group that shows a promising future in biosensors application. TiO
₂
possess both physical and chemical resistant that can extend a device lifespan. However, etching of TiO
₂
with very high selectivity is a challenging process in achieving good and desired profile particularly in nanometer scale. In this work, we present the anisotropic etch profile. Three types of ICP-RIE recipes are used i.e. CF
₄
/O
₂
, Ar/SF
₆
and CF
₄
/Ar. Prior to that, the TiO
₂
sol-gel is deposited on top of SiO
₂
layer. All the results are optically and physically characterized by using 3D-surface profilometer and atomic force microscopy (AFM) and finally followed by electrical characterization.