Electro-optical modeling of high power semiconductor laser based on an InGaAs/GaAs/InGaP heterostructure

We present the electrical-optical modeling of a high power semiconductor laser diode for emission at 800 nm wavelength. We describe a thorough detailed procedure for the modeling of a semicondutor laser device with a Separate Confinement Heterostructure (SCH), based on the material alloys of III-V compounds families, InGaAsP/InGaAsP/InGaP on GaAs substrates. The heterostructure active region produces a peak emisson at 0.8 nm. The SCH heterostructure comprises a quntum well 100 Å thick of InxGa1-xAsyP1-y (x = 0.14, y = 0.73) alloy. The quantum barriers layers comprise quaternary materials of composition InxGa1-xAsyP1-y (x = 0.39, y = 0.2). The confining layers of the quaternary SCH heterostrucure may involve higher gap materials, such as ternary InGaN or quaternary AlGaInP. Band gaps of quaternary materials in the well and confining layers of the SCH heterostructure correspond to wavelengths of 0.8 m (Eg = 1.55 eV) and 0.69 m (Eg = 1.8 eV), respectively.