Fabrication and characterization of 3D fin-channel MANOS type flash memory

The 3D fin-channel charge-trapping (CT) type flash memories with a high-k Al
₂
O
₃
blocking layer (MANOS) have successfully been fabricated by scaling down L
_g
to 22 nm, and their electrical characteristics including variability of threshold voltage (V
_t
), endurance and retention characteristics have systematically been investigated. Thanks to the high-k effect of an Al
₂
O
₃
blocking layer, it was found that the better short-channel effect (SCE) immunity and a larger memory window are obtained in the fabricated MANOS type flash memories than the MONOS ones with a SiO
₂
blocking layer.