Oxygen-inserted SegFET: A candidate for 10-nm node system-on-chip applications

An oxygen-inserted quasi-planar segmented channel MOSFET design is proposed and studied for monolithic system-on-chip applications. Projections indicate that it will provide for higher performance than bulk FinFET technology at the 10 nm node, due to higher field-effect carrier mobility, lower source/drain series resistance, and the benefit of super-steep retrograde well punchthrough-stopper doping.