AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing < 60 mV/dec over 6 orders of drain current swing and relation to traps

AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing (SS) <; 60mV/dec over 6 orders of drain current swing over a wide range of drain biases from 0.1 to 10V at room temperature are demonstrated. A low SS of 33 mV/dec has been observed at a drain bias of 10V when V
_gs
is sweept `up', from low to high values. The origin for such steep SS has been ascribed to the dynamic de-trapping and charge injection into the 2DEG channel from interface states at the dielectric/GaN cap interface, as validated by V
_gs
stress measurements.