Tensile-strained GaAs/sub 1-y/P/sub y/-AlGaAs quantum well diode lasers emitting between 715 nm and 790 nm

Tensile-strained GaAs/sub 1-y/P/sub y/ QWs in LOC-AlGaAs structures for high power lasers at wavelengths below 800 nm were studied. At 735 nm a threshold current density of 180 A/cm/sup 2/ and a wall plug efficiency of 50% at 1.8 W have been achieved.