Tensile-strained single quantum well 808 nm lasers with Al-free active regions and InGaAlP cladding layers grown by solid source MBE

We report reliable 40 W bars and highly efficient (56%) single emitter 808 nm InGaAsP-GaAs quantum well lasers with Al-free active regions. We have demonstrated excellent performance characteristics of high power 808 nm single emitter lasers and bars with Al-free active region grown by solid source molecular beam epitaxy (SSMBE).