Present status and prospects of blue light emitting semiconductor lasers

The InGaN multi-quantum-well-structure laser diodes grown on an epitaxially laterally overgrown GaN on sapphire had an output power as high as 420 mW per facet under RT-CW operation and a lifetime of 250 hours at a constant output power of 30 mW under CW operation at an ambient temperature of 50/spl deg/C.