Piezoresistance effect in PbTe semiconductor microwires deformed by bending

Piezoresistance properties of n- and p-type PbTe semiconductor microwires in a glass coating deformed by bending were studied. It was found that the sample resistance changes linearly with the deformation change. The piezoresistance coefficients are high within the limits (30-200) depending on the diameter and type of the samples. An optimum regime of heat treatment leading the resistance and coefficients of tensor sensitivity to stability in time was found.