Method for determining temperature lower limit state of the extrinsic saturation

The injection of electric active impurities in a semiconductor favours the extrinsic mechanism, generating mobile carriers in the prejudice of the intrinsic mechanism and creating an unbalanced between the concentration of the conducting electrons and the holes in a semiconductor. This paper will present a computation model of temperature where the extrinsic impurities ionizate mechanism cease to supply charge carriers. The model is used to establish this temperature in the case of silicon.