The mechanism of anisotropic etching of silicon in a complexant alkaline system

This paper presents the results of the study and experiments of the chemical anisotropic etching of silicon in a complexant alkaline system (KOH 4.5 M and complexants added). The great results obtained using calix[4]arene like complexant make necessary the study of the mechanism of the silicon etch rate increasing and of the roughness minimizing. A new macrocyclic complexant (azocalix[4]arene) and indicator of pH for silicon etching solution, the etch rate and the roughness are analysed. The complexant alkaline system for anisotropic etching of silicon is an absolutely original idea of the authors.