Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs

We describe the design of double-gate InAs/GaSb tunneling field-effect transistors (TFETs) using GaSb electron wave reflector(s) in the InAs channel. The reflections from the source p-n junction and from the reflector(s) add destructively, causing the net transmission to approach unity at certain energies. The energy range of transmission enhancement can be broadened by the appropriate placement of multiple barriers. With 10-3 A/m OFF-current (I
_OFF
) and a 0.3 V power supply, the subthreshold swing is improved from 14.4 to 4.6 mV/decade and the ON-current (I
_ON
) is improved from 35 to 96 A/m, compared with a conventional GaSb/InAs TFET.