Theory of Superjunction With NFD and FD Modes Based on Normalized Breakdown Voltage

A new relationship between the specific ON-resistance R
_ON
and breakdown voltage V
_B
for the balanced symmetric superjunction (SJ) device is presented to produce the lowest R
_ON
for a given V
_B
. The design formulas, including the doping density NW and the drift length L
_d
, are given for both the nonfull depletion (NFD) and the full depletion SJ devices with an introduction of the normalized V
_B
factor η. For the NFD SJ MOSFET, an R
_ON
∝ V1.03 B relationship is obtained. The analytical results show good agreement with the numerical results.