Recent progress in 4H-SiC static induction transistors for high frequency power generation

For the first time, 4H-SiC static induction transistors (SITs) have demonstrated 400 W pulsed L-band (1.3 GHz) performance (16.7 W/cm source periphery). Additionally, air-bridged parts have shown 78 W pulsed S-band (2.9 GHz) performance (15.1 W/cm source periphery), as well as 47 W pulsed S-band (4 GHz) performance, which represents the highest power densities yet reported for microwave SITs. The extraordinarily high power densities observed in SiC SITs derive from the remarkable physical properties of SiC. The high value of breakdown field strength (∼3 MV/cm), the large value of saturated electron velocity (2×10/sup 7/ cm/s), and the metallic-like thermal conductivity (4.9 W/cm·K) synergistically combine to generate the observed high power densities at high frequency.