High temperature performance of hybrid GaN/SiC high power diodes

Wide bandgap semiconductors are being explored for use in high power, high temperature applications. It is difficult to find a single material that meets all requirements. Improved performance in high power rectification applications can be achieved by a novel hybrid device consisting of GaN and SiC epitaxial layers. This paper presents a simulation study of the electrical characteristics of such a device. The device exploits advantages of GaN and SiC diodes to achieve improved on-state and switching characteristics with better thermal handling capability.