Hydrogen and helium implants for obtaining high-resistance layers in n-type 4H silicon carbide

The effect of light ion implantation damage on the resistivity of n-type 4H-silicon carbide was investigated using hydrogen and helium. Resistivity variation as a function of post-implant annealing temperature and measurement temperature was studied. Maximum resistivities of the order of 10/sup 7/ and 10/sup 8/ /spl Omega/-cm were observed for hydrogen and helium implanted samples, respectively, at room temperature. With increasing measurement temperature, resistivities decreased with activation energies of 0.36 and 0.16 eV for hydrogen and helium, respectively. Resistivities start to decrease after annealing at /spl ges/600/spl deg/C. Rutherford backscattering measurements show implantation damage in the high-resistivity samples.