Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs

We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/μm
²
average switching energy flux.