Effect Of Internal Surface Bondings On The Etching Of SiO2 Aerogel Film

Etching behavior of novel Si02 aerogel film for applying to interlevel dielectric in multilevel interconnections of ultra large-scale integration (ULSI) has been investigated. Recently, low dielectric property has been a critical issue for developing ULSI devices, because the device performance has been limited by signal delay and cross talk in the multilevel interconnections. Si02 aerogel film by sol-gel method and supercritical drying shows very low dielectric constant about 2.