Quantized Conductance Of A Gate-All-Around Silicon Quantum Wire Transistor

As the dimension of VLSI technology approaches the nanometer scale, various fabrication methods have been proposed to establish one-dimensional (1-D) electron confinement. In this work, we have fabricated a gate-all-around silicon quantum wire transistor on an SO1 wafer using electron beam lithography, anisotropic dry etching, and thermal oxidation. The 1-D transport properties of the device has been examined and studied.