Chemical Vapor Deposition Of Tin Films From Tetrakis(methylethylamido)titanium And Ammonia

Recently, MOCVD of TiN has been invetigated by using various Ti-precursors with varying degree of success. Therefore, a new precursor needs to be developed for its proper application as an diffusion barrier for ULSI metallization. In this work, a new titanium compound tetrakis(Etyl-methyl-amido)titanium, TEMAT has been prepared for MOCVD TiN and explored. Direct measurement of the vapor pressure of the compound showed a vapor pressure of 1 Torr at 78 ° C, which is between that of TDMAT (2 Torr at 80 ° C) and TDEAT (0.07 Torr at 80 ° C).