Statistical simulation of MOSFETs using TCAD: meshing noise problem and selection of factors

The parametric yield strongly depends on statistical process fluctuations. Statistical simulation is thus needed for a robust design of process, device and circuit. This article describes the statistical simulation of MOSFETs using technology CAD (TCAD). We used this approach to solve the so-called meshing noise problem caused by discretization in process/device simulation. Also, we propose a new selection method of the factors for obtaining BSIM3v3 worst-case models based on principal component analysis (PCA).