3D simulation of effect on BJT with microwave pulses injected from base

By means of Technology Computer Aided Design (TCAD), we established a 3D simulation model of effect on NPN type Bipolar Junction Transistor (BJT) with microwave pulses injected from base. The physical process of transistor effect with microwave pulses injected from base is studied on the basis of the distribution of electric field, current density and temperature. According to research results, with high amplitude microwave pulses the current density inside the transistor is mainly concentrated between the base and emitter while the collector current is comparatively small. The peak temperature inside the transistor rises in both the positive and negative half periods of microwave pulses. The base region and emitter region near to emitter junction are found to be the hot zone and vulnerable parts of the transistor. In addition, the influence upon effect of BJT with microwave pulses is studied by changing microwave pulses parameters. Failure analysis of damaged BJT is carried out with scanning electron microscope (SEM) and the simulation results are consistent with the damaged parts of transistor observed in experiment.