A Study Of Third-order Intermodulation Distortion Product's Of GaAs Power Fets

In this paper the 4 GHz tnird-order intermodulation disto-rtion behavior of fouf power GaAs FETs from three manufactures is studiej. Two-tone IMD data is given for each device for three tuning conditions: best smail-signal gain, best large-signal gain, and a compromise between gain and better IMD behavior. The ImD was not "well-behaved" in ganerai (3:1 IIAD slope), but rather went irregularly as 4:1 to 6:1. Some degree of gain expansion was observed with each (Device. Since the thiru order IMD products '30 not rise steadily at 3:1, the third-order intercept point is not valij in describing these devices. The I dB gain compression point is poorly defined in cases where there is gain -expansion.