A scalable random telegraph signal simulation based on experimentally — Identified gate oxide defects

This paper presents a new statistical RTS model and a simulation tool to predict and replicate the RTS in time and frequency domains. This new developed RTS model and its simulation tool are constructed based on first-principles, taking into account Coulombic scattering effect, considering the non-uniformity in doping concentration in the channel and the non-uniformity in the trap distribution in the oxide, incorporating the effect of both linear and saturation regions of operation of MOSFETs, including the temperature effect on all temperature dependent parameters, and is fully scalable from single switching electron to ensembles 1/f noise. The RTS simulation (RTSSIM) generates the RTS in time domain based on the electrical properties that are associated with the identified trap. RTSSIM produces smooth transition from the RTS in time domain to 1/f noise and it takes into account the device scalability. The total power spectral density (PSD) for a number of active trap(s) less than 20 is computed directly from the generated RTS waveforms using Welch's PSD method. For 20+ active traps, RTSSIM evaluates the total PSD based on the summation of the RTS spectra.