InxGaUxAs surface channel, quantum well MOSFET: Electrostatic analysis by self consistent CV characterization incorporating strain effects

In this paper, We simulate Capacitance-Voltage (C-V) characteristics of a arsenide based surface channel Quantum Well MOSFET. Coupled Schrödinger-Poisson equation was solved self-consistently taking into consideration of wave function penetration and strain effects. Experimental C-V and a simulated band diagram of the Surface Channel MOSFETs are available in recent literature. However, simulation of C-V characteristics is yet to be done self consistently. We studied the variation of C-V characteristics with channel thickness. We also compared the device performance by adding a layer of more compressive In
x
Ga
1−x
As(x>0.53) layer with the strain free undoped In
0
.
53
Ga
0
.
47
As channel of the structure.