New features in planar SiGe channel tunnel FETs performance and operation

We report the characterization of SiGe Tunnel FETs (TFETs) fabricated on SGOI with a standard CMOS process. The large gain in saturation gain (x20) is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels). We also investigate the ambipolar signature from the I
_D
(V
_DS
) of TFETs which we compare to MOSFETs. A simple protocol is proposed and validated to get a rapid insight in injection mechanism at the two junctions of any FET device.