Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability

The gate oxide charging (stressing) mode during plasma processing was investigated from the experimental data of two TDDB measurements, Q/sub bd/ and t/sub bd/ testings and the gate current behaviour in t/sub bd/ testing after the plasma treatment and the post-process current injection (electrical stress). It was confirmed that in some cases the t/sub bd/, which determines the oxide lifetime under operating conditions, increases after the plasma treatments in both MERIE (magnetically enhanced RIE) and ICP processing.