Tunnelling transport in Al-n-GaSb Schottky diodes

Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60/spl plusmn/0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K, are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal, accentuated by annealing, suggesting modification of the reactive GaSb surface.