Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

Based on sulphur passivation (10% (NH
₄
)
₂
S, 20min), the interface of MOS capacitors between atomic-layer-deposited Al
₂
O
₃
and (110)-oriented p-type In
_0.53
Ga
_0.47
As layers indicate the capability of Fermi level movement and minority carrier inversion. C
_ox
has effectively extracted by G
_m
/ω & - ωdC/dω. Forming gas annealing (N
₂
:H
₂
5%:95% at 350°C, 30min) improves minority carrier response and the interface trap density around the midgap estimated to be 4.4×10
¹²
(1.6×10
¹²
) cm
^-2
eV
^-1
before (and after) FGA. Moreover, Fowler-Nordheim (FN) tunneling current provides the conduction band offset at the surface between Al
₂
O
₃
and In
_0.53
Ga
_0.47
As (110)-oriented layer is ~1.81eV and the barrier height is estimated to be the same after FGA. Finally, the band parameter of Al
₂
O
₃
and In
_0.53
Ga
_0.47
As (110)-oriented layer has been firstly reported.