Characterisation and modelling of Mg doped ZnO TFTs

The ever-increasing use of ZnO TFTs requires further in depth analysis and the need for a suitable model to obtain the true transport mechanisms. This paper explores the modelling of MgZnO TFTs using a defect state model based on multiple trapping and release and successfully validates the model with the fitting parameters. Namely, flat band voltage, characteristic temperature associated with the defect distribution, number of traps and conductivity of the ZnO film.