The effect of ion implantation on the gate oxide integrity of SOI wafers

The effect of ion implantation on the gate oxide integrity (GOI) of SOI wafers has been investigated. It has been found that the GOI of SOI wafers is significantly affected by ion implantation to the SOI layer before gate oxidation. SOI wafers are found to be more sensitive to metal contamination than bulk wafers because the buried oxide (BOX) layer functions as a diffusion barrier for metal contamination. The effect of the SOI-BOX interface on the gettering of metal contamination is also discussed.