Improved reliability of GaN HEMTs using N2 plasma surface treatment

In this work, we present a systematic study on AlGaN surface treatment by N
₂
plasma treatment prior to SiN deposition to enhance the reliability of the AlGaN/GaN MIS-HEMT. N
₂
plasma treatment can effective remove surface impurities and discharge at the GaN surface, thus improving the SiN/GaN interface quality. With this technique, the GaN MIS-HEMT exhibits excellent reliability after high-gate-bias stress, high-drain-bias stress, and continuously long-term switching.