A high tensile stress spacer by low temperature microwave anneal induced 50% mobility enhancement for nano scale FinFETs device

Tensile stress enhancement by rapid thermal annealing (RTA) and microwave annealing (MWA) are compared in this study. SiNx films after low temperature MWA treatment depicted higher tensile stress than the films annealed by RTA. Therefore, MWA approach is useful in contact etch-stop layer or stress memorization technique for the fabrication of small pitch nanoscaled n-channel FinFETs.