Highly accurate TEM/EDS analysis to identify the stack oxide-nitride-oxide structure of advanced NAND flash products

In this work, the electron dispersive spectroscopy (EDS) methodology was used to identify the thin stack oxide-nitride-oxide (ONO) structure of advanced NAND flash products. By the specific dual silicon drift detectors (SDDs) hardware design and the optimized parameters for data acquisition, the accurate results from a damage-free specimen can be obtained.