Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect

Strained Ge p-channel FinFETs on Strain Relaxed SiGe are integrated for the first time on high density 45nm Fin pitch using a replacement channel approach on Si substrate. In comparison to our previous work on isolated sGe FinFETs [1], 14/16nm technology node compatible modules such as replacement metal gate and germanide-free local interconnect were implemented. The I
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benchmark shows the high density strained Ge p-FinFETs in this work outperform the best published isolated strained Ge on SiGe devices.