In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate

In
_0.53
Ga
_0.47
As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In
_0.53
Ga
_0.47
As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS~95 mV/dec., I
_on
/I
_off
~10
⁵
, DIBL ~51 mV/V at V
_ds
= 0.5V for L
_g
=150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (μ
_EF
= 1837 cm
²
/V-s with EOT ~ 0.9 nm) is among the highest values reported for surface channel In
_0.53
Ga
_0.47
As MOSFETs.