Novel laser structures based on MQW interdiffusion using rapid thermal annealing technique

In this paper, experimental results for GaAlAs-GaAs multiple-quantum-well (MQW) interdiffusion using rapid thermal annealing (RTA) technique under different processing conditions are presented and discussed. Two kinds of novel laser structures based on such technique are also proposed and fabricated. First, a laser diode with window region for high-power operation is designed and fabricated. The maximum output power of such a device shows an increase by 18% over laser diodes without interdiffused window region. Then a transverse mode controlled laser structure taking advantages of the refractive index change induced by MQW interdiffusion is realized using RTA technique. Single-mode operation up to four times the threshold current has been demonstrated for this RTA treated laser diode.