Temperature-dependent electrical performance of AlGaN/GaN MOS-HEMT with ultrasonic spray pyrolysis deposited Al2O3

This work investigates an AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with ultrasonic spray pyrolysis (USP) deposited Al
₂
O
₃
. The temperature-dependent electrical characteristics like I
_GD
-V
_GD
, I
_DS
-V
_DS
, and I
_DS
-V
_GS
are measured from 300 K to 480 K. The MOS-HEMT shows lower I
_GD
and higher I
_DS
and higher g
_{m, max}
. Furthermore, the MOS-HEMT has better thermal stability in electrical performances. The thermal models of electron mobility of the Al
₂
O
₃
/AlGaN/GaN MOS-HEMT and the AlGaN/GaN Schottky-gate HEMT with Al
₂
O
₃
passivation are analyzed. The superior high-temperature electrical performances of the MOS-HEMT are very promising for highpower and high-temperature electronics applications.