Graphene RF NEMS shunt switches for analog and digital phase shifters

We present the wafer-level fabrication and the first measurements of RF capacitive NEMS switches based on CVD multilayer graphene for wideband RF phase shifters for analog and digital applications. We assess the phase shifter performance by using the characterization data of the fabricated NEMS switches to perform calibrated simulations using an equivalent circuit. We demonstrate the possibility to achieve 355°/dB at 2.4 GHz for the analog design and 138°/dB at 2.4 GHz for the digital one.