10 nm nominal channel length MoS2 FETs with EOT 2.5 nm and 0.52 mA/µm drain current

Summary form only given. In this abstract, multi-layer MoS₂ field-effect transistors (FET) _[1] with record short 10 nm nominal channel length (L_ch) and ultrathin gate dielectric (EOT~2.5 nm) have been demonstrated. These aggressively scaled devices show high performances including a drain current of 0.52 mA/μm, an on/off ratio larger than 10⁶ and an extrinsic transconductance of 142 μS/μm. This study sheds light on the impact of channel thickness, channel length and gate dielectric scaling in multi-layer MoS₂ FETs.