Fabrication of thin-film HfS2 FET

In conclusion, we demonstrated the fabrication and I-V characteristics of HfS
₂
FETs. For the channel thickness of less than 7.5 nm, a clear saturation behavior and drain current of 0.2 μA/μm were observed with reasonably good on/off current ratio. These results provide basic knowledge of HfS
₂
as a channel material for FET.