InAs nanowire gate-all-around MOSFETs by heterogeneous planar VLS growth

Summary form only given. High Indium content (In%) InGaAs is a promising channel material to extend Si based CMOS technology
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. However, due to its huge lattice mismatch with commercially available III-V substrates (GaAs or InP), it is difficult to grow high In% film beyond the ultra-thin critical thickness, and therefore difficult to obtain the in-plane nanowires (NWs) based on top-down etching of a thin-film structure. Here we directly grow InAs planar NWs heterogeneously on GaAs (100) via the vapor-liquid-solid (VLS) mechanism
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and demonstrate a planar NW gate-all-around (GAA) MOSFET device. Despite a 6.7% lattice mismatch between InAs and GaAs (leading to a critical thickness below 1 nm for thin-film growth), high-quality InAs NWs are realized, enabling good electrical performance of MOSFET with a planar InAs NW as the channel. This technology also provides a potential solution for integrating planar NW channels of different materials on a single substrate.