Analysis of the effect of gamma-ray irradiation and low-temperature characteristics of sol-gel derived ZnO thin-film transistors

Summary form only given. In conclusion, we investigated the effects of gamma-ray irradiation and low temperature on the device performance of sol-gel derived ZnO thin-film transistors. In both cases, the degradation of the device performance was observed. In the case of radiation study, further investigation is needed to identify which part of the device is damaged upon gamma-ray irradiation. Further details and results from additional experiments will be presented.