0.2V adiabatic NC-FinFET with 0.6mA/µm ION and 0.1nA/µm IOFF

We present for the first time a Negative Capacitance (NC) FinFET. Simulation shows 0.2V operation with 0.6mA/µm on-current and 100pA/µm leakage current. A simple model guides the optimization of the ferroelectric film and the FinFET in the NC-FinFET. Our finding that a weak ferroelectric material is preferable greatly increases the candidate material classes and we report the target properties to search for. Counterintuitively, the gate to S/D capacitance and a thicker EOT both reduce the required V
DD
. NC-FinFET is good for high performance and very low power applications.