Ga2O3 Schottky barrier diodes with n−-Ga2O3 drift layers grown by HVPE

The new wide-bandgap oxide semiconductor, gallium oxide (Ga
₂
O
₃
), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baliga's figure of merit of Ga
₂
O
₃
is expected to be much larger than those of SiC and GaN due primarily to Ga
₂
O
₃
's extremely large bandgap of 4.5~4.9 eV, which will enable Ga
₂
O
₃
power devices with higher breakdown voltage (V
_br
) and efficiency than SiC and GaN devices [1]. The other important advantage of Ga
₂
O
₃
is that large, high-quality bulk single crystals can be grown by using melt growth methods. Recently, we developed a homoepitaxial growth technique for high-purity Ga
₂
O
₃
thin films on single-crystal Ga
₂
O
₃
substrates by halide vapor phase epitaxy (HVPE) [2, 3]. This is the first report on Ga
₂
O
₃
Schottky barrier diodes (SBDs) with epitaxial Si-doped n
^-
-Ga
₂
O
₃
drift layers grown by HVPE.