Simple creep parameters extraction in metal contact RF-MEMS switches

This paper presents a novel methodology for mechanical creep modeling in RF-MEMS. The devices are held in the down state and a servo loop maintains a constant contact resistance by varying the applied bias voltage. From this down state bias voltage variation, creep parameters, both from mechanical structure and contact area, are extracted. This method can be conducted on packaged commercial devices without needing any specific fabrication. This test can be used for rapid device screening and technology optimization.