A 700MHz output bandwidth, 30dB dynamic range, common-base mm-wave power detector

This paper describes a V-Band power detector fabricated in a BiCMOS 55nm (f
_t
/f
_max
= 320GHz/370GHz) process. The detector is to be used in millimeter-wave circuits for automatic level control, built-in test and in-situ power measurement. The detector occupies an area of 0.0064mm
²
and exhibits an equivalent input resistance/capacitance of 1kΩ /13fF around 60GHz. Measurements show a detection dynamic range of 30dB over the 50GHz to 66GHz bandwidth. The minimum detectable input power is -22dBm thanks to the use of common base bipolar SiGe transistor at the input stage. The measured output bandwidth is 700MHz. In nominal bias conditions, the detector power consumption is 90μW for -22dBm input power and it increases to 800μW for 8.5dBm input power. These performances are beyond the current state-of-the-art.